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| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 600 20 82 50 328 310 +150 -40 +150 70 Units V V A W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=50mA VGE=15V IC=50A VGE=0V VCE=10V f=1MHz VCC=300V IC=50A VGE=15V RG=62 VCC=300V IC=50A VGE=+15V RG=6 Min. Typ. Max. 1.0 20 8.5 3.0 Units mA A V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 0.35 5.5 3000 650 150 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time s s * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Test Conditions Min. Typ. Max. 0.40 Units C/W Collector Current vs. Collector-Emitter Voltage 120 T j= 2 5 C 120 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C 100 V GE = 2 0 V , 1 5 V 1 2 V V GE = 2 0 V , 1 5 V 100 12V [A] 80 [A] 80 60 C Collector Current : I Collector Current : I C 60 10V 40 40 10V 20 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 20 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 2 100A 50A 25A 4 I C= 100A 50A 25A 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 3 0 0 V , R G =6.2 , V GE = 1 5 V , T j= 2 5 C 1000 1000 Switching Time vs. Collector Current V CC = 3 0 0 V , R G =6.2 , V GE= 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] t off tf 100 t on tf t on 100 Switching Time : t on Switching Time : t on tr tr 10 0 20 40 60 80 10 0 20 40 60 80 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =300V, I C = 5 0 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =300V, I C = 5 0 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] 1000 t on t off , t r, t off , t f [nsec] 1000 t off tf t on 100 tr on tr tf 100 Switching Time : t 10 0 50 Gate Resistance : R G [ ] 100 Switching Time : t on 10 0 50 Gate Resistance : R G [ ] 100 Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 10 500 Dynamic Input Characteristics T j= 2 5 C 25 [V] , C res , C ies [nF] C ies CE Collector-Emitter Voltage : V 1 300 15 Capacitance : C oes C oes 200 10 0,1 C res 100 5 0,01 0 5 10 15 20 25 30 35 0 0 50 100 150 Gate Charge : 200 250 Q G [nQ] 0 300 Collector-Emitter Voltage : V CE [V] Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 400 / dt = 1 0 0 A / s e c 15 / dt = 1 0 0 A / s e c [nsec] [A] 300 125C 125C 10 rr Reverse Recovery Time : t 200 Reverse Recovery Current : I rr 25C 100 5 25C 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V GE [V] 400 V C C =200V, 300V, 400V 20 Reverse Biased Safe Operating Area + V GE = 1 5 V , - V GE< 15V, T j< 1 2 5 C , R G > 6.2 120 600 Typical Short Circuit Capability V CC = 4 0 0 V , R G=6.2 , T j= 1 2 5 C 60 I SC 50 t SC 100 500 [A] [A] SC 80 400 40 C Short Circuit Current : I Collector Current : I 60 300 30 40 200 20 20 100 10 0 0 100 200 300 400 500 600 700 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 120 T j= 1 2 5 C 2 5 C 500 I F = 5 0 A , T j= 1 2 5 C -di / dt 25 [nsec] 100 [A] Forward Current : I 300 15 60 200 t rr 100 10 40 20 5 0 0,0 0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 0 100 200 -di 300 [A/sec] 400 0 500 Forward Voltage : V F [V] / dt Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 0 IGBT 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 P u l s e W i d t h : P W [sec] P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com Reverse Recovery Current : I 80 Reverse Recovery Time : t F rr rr [A] 400 I rr 20 Short Circuit Time : t SC [s] |
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